Fujitsu to turn out GaN power transistors in 2013

01/6/2013 | Electronics Weekly (U.K.)

Fujitsu Semiconductor plans to make gallium-nitride-based power transistors using a GaN-on-silicon fabrication process this year, according to this article. Silicon is a less expensive alternative to sapphire and silicon-carbide substrates, which have traditionally been used to make power transistors, the article notes. The GaN-based power transistors can be used in battery chargers and solar inverters, along with the power supplies for electric vehicles and servers, according to the chipmaker.

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Electronics Weekly (U.K.)

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