MIT researchers find new way to passivate silicon

02/15/2013 | XBitLabs.com

Researchers at the Massachusetts Institute of Technology report they can passivate silicon at room temperature, a development that promises to lower costs in producing solar cells and other silicon-based semiconductor devices. The passivation process currently requires heating a silicon surface to 400 degrees C.

View Full Article in:

XBitLabs.com

Published in Briefs:

SmartBrief Job Listings for Tech

Job Title Company Location
Product Marketing Consultant
Sand Cherry Associates
Philadelphia, PA