NXP offers power transistors for RF heating applications

06/10/2013 | Electronics Weekly (U.K.)

NXP Semiconductors has introduced the BLF2425M and BLF25M line of laterally diffused metal-oxide semiconductor power transistors, aimed at applications in radio-frequency heating. Power levels of the parts range from 12 watts to 350W, according to the chipmaker.

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Electronics Weekly (U.K.)

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