Researchers grow graphene on silicon carbide wafers

09/26/2011 | Electronics Weekly (U.K.)

Researchers at the Georgia Institute of Technology were able to grow nearly pure graphene, a form of carbon, on the surface of silicon carbide wafers. Reporting on the method to the National Academy of Sciences, the Georgia Tech scientists said they heated SiC wafers to about 1,500 degrees C in a vacuum, driving silicon from the surface of the substrates and leaving behind a layer of graphene.

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