Researchers at Lawrence Berkeley National Laboratory, using thin films of indium arsenide atop a calcium fluoride substrate, report that they were able to discover a universal law of light absorptance in two-dimensional semiconductors. Berkeley Lab's Ali Javey said in a statement, "We used free-standing indium arsenide membranes down to three nanometers in thickness as a model material system to accurately probe the absorption properties of 2D semiconductors as a function of membrane thickness and electron band structure." He added, "We discovered that the magnitude of step-wise absorptance in these materials is independent of thickness and band structure details."

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